This article details photoluminescence techniques for evaluating GaN, highlighting their role in identifying defects and enhancing semiconductor quality.
A series of experiments across multiple research groups has shown that deliberately implanting atomic-scale defects into ordinary silicon can turn the world’s most common semiconductor into a source ...
PCA and K-means clustering applied to Raman and PL imaging reveal structural defects in silicon wafers, enhancing understanding of optoelectronic performance.